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I. A recirculating charged-couple device. II. The mercury selenide on N-silicon Schottky barrier


Clough, Gene Alan (1978) I. A recirculating charged-couple device. II. The mercury selenide on N-silicon Schottky barrier. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/dadc-z725.


A recirculating charge-coupled device structure has been devised. Entrance and exit gates allow a signal to be admitted, recirculated a given number of times, and then examined. In this way a small device permits simulation of a very long shift register without passing the signal through input and output diffusions. An oscilloscope motion picture demonstrating degradation of an actual circulating signal has been made. The performance of the device in simulating degradation of a signal by a very long shift register is well fit by a simple model based on transfer inefficiency.

Electrical properties of the mercury selenide on n-type chemically-cleaned silicon Schottky barrier have been studied. Barrier heights measured were 0.96 volts for the photoresponse technique and 0.90 volts for the current-voltage technique. These are the highest barriers yet reported on n-type silicon.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Mead, Carver (advisor)
  • McCaldin, James Oeland (co-advisor)
  • McGill, Thomas C. (co-advisor)
Thesis Committee:
  • Unknown, Unknown
Defense Date:6 September 1977
Record Number:CaltechTHESIS:07172014-100207238
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8549
Deposited By: Benjamin Perez
Deposited On:17 Jul 2014 17:16
Last Modified:09 Nov 2022 19:20

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