Citation
Kuech, Thomas Francis (1981) Investigations of Schottky Barrier Structures in Compound Semiconductors: I. HgTe on CdTe: A Lattice Matched Schottky Barrier. II. Au-Cd Barriers to CdTe. III. Au Barriers on InₓGa₁₋ₓP. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/8hcw-7421. https://resolver.caltech.edu/CaltechETD:etd-12122006-090129
Abstract
i) The Au Schottky barrier height to n - InxGa1-xP was measured as a function of alloy composition. The Au barrier, φp, to p - InxGa1-xP was found to be independent of composition. The barrier, φp, was determined by the relation φp + φn = φg where φg is the band gap energy and φn is the measured barrier height to n - InxGa1-xP. It has been observed that the Au barrier height to p-type material for most compound semiconductors is determined by the anion. This dependence on the anion of the compound has now been seen to extend to the alloy system InxGa1-xP measured here.
ii) The Schottky barrier height of Cd, Au, and Au-Cd alloys was determined on vacuum cleaved surfaces of n-CdTe. A large barrier of 0.92 eV was found in the case of the Au-Cd alloy contacts. Contacts made with elemental Cd or Au gave barrier heights of 0.45 and 0.65 eV, respectively. The increased barrier height found on Au-Cd alloy contacts may be related to recent UHV observations on Schottky barrier formation where crystal defects play a role in determining the observed barrier height.
iii) HgTe-CdTe lattice matched heterojunctions were formed by the epitaxial growth of HgTe on CdTe substrates using a new low temperature metal organic chemical vapor deposition (MOCVD) technique. These heterojunctions combine features of the Schottky barrier structure, due to the high carrier concentrations found in the semi-metallic HgTe, with the structural perfection present in a lattice matched heterojunction. The measured Schottky barrier height varied from 0.65 to 0.90 eV depending on the details of the HgTe growth procedure used. Two models of the HgTe-CdTe heterojunction are presented which account for the observed variation in barrier height.
| Item Type: | Thesis (Dissertation (Ph.D.)) | |||||||||
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| Subject Keywords: | Applied Physics | |||||||||
| Degree Grantor: | California Institute of Technology | |||||||||
| Division: | Engineering and Applied Science | |||||||||
| Major Option: | Applied Physics | |||||||||
| Thesis Availability: | Public (worldwide access) | |||||||||
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| Defense Date: | 7 April 1981 | |||||||||
| Additional Information: | In 1980 Commencement Program, thesis entitled: "Investigations of Schottky Barrier Structures in Compound Semiconductors. I. HgTe on CdTe: A Lattice Matched Scottky Barrier. II. Au-Cd Barriers to CdTe. III. Au Barriers on In(x)Ga(1-x)P." | |||||||||
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| Record Number: | CaltechETD:etd-12122006-090129 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechETD:etd-12122006-090129 | |||||||||
| DOI: | 10.7907/8hcw-7421 | |||||||||
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| Default Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 4964 | |||||||||
| Collection: | CaltechTHESIS | |||||||||
| Deposited By: | Imported from ETD-db | |||||||||
| Deposited On: | 22 Dec 2006 | |||||||||
| Last Modified: | 24 May 2024 18:33 |
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