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Investigations of quantum wires, carrier diffusion lengths, and carrier lifetimes in GaAs/AlGaAs heterostructures


Zarem, Hal (1990) Investigations of quantum wires, carrier diffusion lengths, and carrier lifetimes in GaAs/AlGaAs heterostructures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/ajzc-wx87.


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Nanometer scale wire structures are fabricated by selective disorder of a GaAs/AlGaAs quantum well. These structures are investigated by cathodoluminescence (CL). Spectrally resolved CL images of the structures as well as local CL spectra of the structures are resented. The effects of fabricational variations on quantum wire laser gain spectra and performance are discussed. A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. The ambipolar diffusion length and carrier lifetime are measured in [...] for several mole fractions in the interval 0 < [...] < 0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.

Item Type:Thesis (Dissertation (Ph.D.))
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Yariv, Amnon (advisor)
  • Vahala, Kerry J. (co-advisor)
Thesis Committee:
  • Unknown, Unknown
Defense Date:22 November 1989
Record Number:CaltechETD:etd-11092007-090251
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4479
Deposited By: Imported from ETD-db
Deposited On:05 Dec 2007
Last Modified:16 Apr 2021 23:17

Thesis Files

PDF (Zarem_h_1990.pdf) - Final Version
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