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Physics and applications of resonant tunneling devices


Kan, Sidney Chunping (1991) Physics and applications of resonant tunneling devices. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/9CXE-6C77.


This thesis addresses several important issues of the physics and applications of double barrier resonant tunneling devices on which the author worked during his graduate study at Caltech:

(1) Epitaxial growth of AlAs/GaAs double barrier resonant tunneling structure on both GaAs and Si substrate (Chapter 2). (2) Investigation of terahertz modulation of resonant tunneling effect (Chapter 3). (3) Study of the imaginary potential in double barrier resonant tunneling (Chapter 4). (4) Development of the first series of optical resonant tunneling devices and parallel resonant tunneling (Chapter 5).

The history of the development of double barrier resonant tunneling and the basic theory are also discussed (Chapter 1).

Item Type:Thesis (Dissertation (Ph.D.))
Degree Grantor:California Institute of Technology
Division:Physics, Mathematics and Astronomy
Major Option:Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Yariv, Amnon
Thesis Committee:
  • Unknown, Unknown
Defense Date:23 May 1991
Record Number:CaltechETD:etd-06212007-141621
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2677
Deposited By: Imported from ETD-db
Deposited On:18 Jul 2007
Last Modified:20 Dec 2019 20:00

Thesis Files

PDF (Kan_sc_1991.pdf) - Final Version
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