Lam, Wayne W. (1987) Millimeter-wave monolithic Schottky diode-grid phase shifter. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-03032008-105407
Many applications at millimeter wavelengths require fast electronic phase shifters. In this study, the design of diode-grid phase shifters is presented, the fabrication of diode-grids on monolithic gallium-arsenide substrates is demonstrated, and the measurement of these grids is discussed. A new computer-aided design tool is developed to provide an interactive environment for design and to form a basis for comparing theory and experimental results. Diode-grids have been fabricated on 2 cm by 3 cm gallium-arsenide wafers with 2000 aluminum Schottky diodes. A novel small aperture reflectometer is computerized to use a wave-front division interference technique to measure the reflection coefficient of the grids. A 70° phase shift with a 6.5-dB loss was measured at 93 GHz when the bias on the diode-grid was changed from -3V to +1V.
|Item Type:||Thesis (Dissertation (Ph.D.))|
|Degree Grantor:||California Institute of Technology|
|Division:||Engineering and Applied Science|
|Major Option:||Electrical Engineering|
|Thesis Availability:||Restricted to Caltech community only|
|Defense Date:||31 January 1987|
|Default Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Imported from ETD-db|
|Deposited On:||03 Mar 2008|
|Last Modified:||26 Dec 2012 02:32|
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