Millimeter-wave monolithic Schottky diode-grid phase shifter

Citation

Lam, Wayne W. (1987) Millimeter-wave monolithic Schottky diode-grid phase shifter. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-03032008-105407

Abstract

Many applications at millimeter wavelengths require fast electronic phase shifters. In this study, the design of diode-grid phase shifters is presented, the fabrication of diode-grids on monolithic gallium-arsenide substrates is demonstrated, and the measurement of these grids is discussed. A new computer-aided design tool is developed to provide an interactive environment for design and to form a basis for comparing theory and experimental results. Diode-grids have been fabricated on 2 cm by 3 cm gallium-arsenide wafers with 2000 aluminum Schottky diodes. A novel small aperture reflectometer is computerized to use a wave-front division interference technique to measure the reflection coefficient of the grids. A 70° phase shift with a 6.5-dB loss was measured at 93 GHz when the bias on the diode-grid was changed from -3V to +1V.

Item Type:	Thesis (Dissertation (Ph.D.))
Degree Grantor:	California Institute of Technology
Division:	Engineering and Applied Science
Major Option:	Electrical Engineering
Thesis Availability:	Restricted to Caltech community only
Research Advisor(s):	Rutledge, David B.
Thesis Committee:	Rutledge, David B. (chair) Yariv, Amnon Nicolet, Marc-Aurele Bridges, William B.
Defense Date:	31 January 1987
Record Number:	CaltechETD:etd-03032008-105407
Persistent URL:	http://resolver.caltech.edu/CaltechETD:etd-03032008-105407
Default Usage Policy:	No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:	851
Collection:	CaltechTHESIS
Deposited By:	Imported from ETD-db
Deposited On:	03 Mar 2008
Last Modified:	26 Dec 2012 02:32

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