Zarem, Hal (1990) Investigations of quantum wires, carrier diffusion lengths, and carrier lifetimes in GaAs/AlGaAs heterostructures. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-11092007-090251
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Nanometer scale wire structures are fabricated by selective disorder of a GaAs/AlGaAs quantum well. These structures are investigated by cathodoluminescence (CL). Spectrally resolved CL images of the structures as well as local CL spectra of the structures are resented. The effects of fabricational variations on quantum wire laser gain spectra and performance are discussed. A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. The ambipolar diffusion length and carrier lifetime are measured in [...] for several mole fractions in the interval 0 < [...] < 0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.
|Item Type:||Thesis (Dissertation (Ph.D.))|
|Degree Grantor:||California Institute of Technology|
|Division:||Engineering and Applied Science|
|Major Option:||Applied Physics|
|Thesis Availability:||Restricted to Caltech community only|
|Defense Date:||22 November 1989|
|Default Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Imported from ETD-db|
|Deposited On:||05 Dec 2007|
|Last Modified:||26 Dec 2012 03:09|
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