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Study of Solid-Phase Reactions of metals on GaAs


Liew, Boon-Khim (1985) Study of Solid-Phase Reactions of metals on GaAs. Senior thesis (Major), California Institute of Technology. doi:10.7907/pay8-6h38.


To make stable and reproducible contacts to GaAs, metals which react with GaAs in the solid-phase should be favored. In this study, contacts formed employing Pd/TiN/Pd/Ag, Pd:Mg/TiN/Pd:Mg/Ag and Ru/TiN/Ru/Ag are studied. The TiN layer is included to investigate its application as diffusion barrier in these metallizations. Contacts to n-GaAs are rectifying and the value of barrier height is modified upon annealing. Contacts to p-GaAs are initially rectifying but exhibit ohmic behaviour after annealing. The modifications in the electrical properties are attributed to the solid-phase reaction of metal and GaAs. The integrity of the contacts relies critically on the success of TiN to prevent the intermixing of Ag overlayer and the underlying layers. At elevated annealing temperatures (450°C), TiN fails to function as a diffusion barrier. As a result, the properties of the contact deteriorates.

Item Type:Thesis (Senior thesis (Major))
Subject Keywords:Electrical Engineering
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Electrical Engineering
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Nicolet, Marc-Aurele
Thesis Committee:
  • Unknown, Unknown
Defense Date:3 June 1985
Additional Information:Pg. 21 is missing from scanned paper copy.
Record Number:CaltechTHESIS:10152014-085619478
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8694
Deposited By: Benjamin Perez
Deposited On:27 Oct 2014 16:13
Last Modified:24 May 2024 18:24

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