A Caltech Library Service

Double-Injection: High Frequency Noise and Temperature Dependence


Lee, Don Howard (1969) Double-Injection: High Frequency Noise and Temperature Dependence. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/964x-ab98.


Noise measurements from 140°K to 350°K ambient temperature and between 10kHz and 22MHz performed on a double injection silicon diode as a function of operating point indicate that the high frequency noise depends linearly on the ambient temperature T and on the differential conductance g measured at the same frequency. The noise is represented quantitatively by〈i^2〉 = α•4kTgΔf. A new interpretation demands Nyquist noise with α ≡ 1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double injection process. The effects of diode geometry on the static I-V characteristic as well as on the ac properties are illustrated. Investigation of the temperature dependence of double injection yields measurements of the temperature variation of the common high-level lifetime τ(τ ∝ T^2), the hole conductivity mobility µ_p (µ_p ∝ T^(-2.18)) and the electron conductivity mobility µ_n(µ_n ∝ T^(-1.75)).

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:(Electrical Engineering)
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Electrical Engineering
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Nicolet, Marc-Aurele
Thesis Committee:
  • Unknown, Unknown
Defense Date:8 May 1969
Record Number:CaltechTHESIS:10072014-144607202
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8676
Deposited By: Bianca Rios
Deposited On:07 Oct 2014 22:01
Last Modified:24 May 2024 18:28

Thesis Files

PDF - Final Version
See Usage Policy.


Repository Staff Only: item control page