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Investigations of the conductor-semiconductor interface


Scranton, Robert A. (1978) Investigations of the conductor-semiconductor interface. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/z9j6-a423.


I. Schottky barriers produced by polymeric sulfur nitride, (SN)x, on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n-type semiconductors and lower barriers to p-type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as ɸ(SN)x - ɸ(Au), is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, samples preparation, and barrier height measurements are described.

II. The rate of dissolution of amorphous Si into solid Al is measured. The rate of movement of the amorphous Si/Al interface is found to be much faster than predicted by a simple model of the transport of Si through Al. This result is related to defects in the growth of epitaxial Si using the solid phase epitaxy process.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • McCaldin, James Oeland (advisor)
  • McGill, Thomas C. (co-advisor)
  • Mead, Carver (co-advisor)
Thesis Committee:
  • Unknown, Unknown
Defense Date:19 October 1977
Record Number:CaltechTHESIS:07222014-101031867
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8582
Deposited By: Benjamin Perez
Deposited On:22 Jul 2014 18:16
Last Modified:09 Nov 2022 19:20

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