Hall Coefficient and Resistivity of an Amorphous Palladium-Silicon Alloy

Citation

Ayers, Raymond Dean (1971) Hall Coefficient and Resistivity of an Amorphous Palladium-Silicon Alloy. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/05KN-J366. https://resolver.caltech.edu/CaltechTHESIS:07182014-105821882

Abstract

The Hall coefficient and resistance in several specimens of an amorphous metallic alloy containing 80 at.% palladium and 20 at.% silicon have been investigated at temperatures between 4.2°K and room temperature. An ideal limiting behavior of these transport coefficients was analyzed on the basis of the nearly free electron model to yield a carrier density of 9 x 10²² cm.^-3, or about 1.7 electrons per palladium atom, and a mean free path of about 9Å which is almost constant with temperature. The deviations of the individual specimens from this ideal behavior, which were small but noticeable in the relative resistivity and much greater in the Hall coefficient, can be explained by invoking disk-shaped crystalline regions with low resistivity and a positive Hall coefficient. A detailed calculation shows how a volume fraction of such crystalline material too small to be noticed in X-ray diffraction could have a significant effect on the resistivity and a much greater effect on the Hall coefficient.

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