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Schottky barriers on compound semiconductors: I. HgSe highly electronegative contacts. II. Au Schottky barriers on n-Ga_(1-x)Al_xAs


Best, John S. (1979) Schottky barriers on compound semiconductors: I. HgSe highly electronegative contacts. II. Au Schottky barriers on n-Ga_(1-x)Al_xAs. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/ysaz-r608.


I. HgSe is deposited on various semiconductors, forming a semimetal/semiconductor "Schottky barrier" structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n-type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. A novel structure,which is both a lattice matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of HgSe on CdSe using hydrogen transport CVD. The Schottky barrier height for this structure is 0.73 ± 0.02 eV, as measured by the photoresponse method. This uncertainty is unusually small; and the magnitude is greater by about a quarter volt than is achievable with Au, in qualitative agreement with ionization potential arguments.

II . The Schottky barrier height of Au on chemically etched n-Ga1-x AlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x ≈ 0.45 , then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the "common anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1-x AlxAs surface.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • McCaldin, James Oeland
Thesis Committee:
  • Unknown, Unknown
Defense Date:25 May 1979
Record Number:CaltechTHESIS:07162014-160535319
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8546
Deposited By: Benjamin Perez
Deposited On:17 Jul 2014 14:06
Last Modified:19 Apr 2021 22:29

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