Schottky Barriers on Compound Semiconductors: I. HgSe Highly Electronegative Contacts. II. Au Schottky Barriers on n-Ga₁₋ₓA1ₓAs

Citation

Best, John Stewart (1979) Schottky Barriers on Compound Semiconductors: I. HgSe Highly Electronegative Contacts. II. Au Schottky Barriers on n-Ga₁₋ₓA1ₓAs. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/ysaz-r608. https://resolver.caltech.edu/CaltechTHESIS:07162014-160535319

Abstract

I. HgSe is deposited on various semiconductors, forming a semimetal/semiconductor "Schottky barrier" structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n-type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. A novel structure,which is both a lattice matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of HgSe on CdSe using hydrogen transport CVD. The Schottky barrier height for this structure is 0.73 ± 0.02 eV, as measured by the photoresponse method. This uncertainty is unusually small; and the magnitude is greater by about a quarter volt than is achievable with Au, in qualitative agreement with ionization potential arguments.

II . The Schottky barrier height of Au on chemically etched n-Ga_1-x Al_xAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x ≈ 0.45 , then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the "common anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga_1-x Al_xAs surface.

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