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Tunneling in Schottky Barriers


Parker, Gerhard Hans (1970) Tunneling in Schottky Barriers. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/QC24-Z481.


The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low voltage levels by providing a two-step transition. The slope of the forward bias log J vs. V curves for tunneling through the intermediate states was reduced by a factor of 2. The approximate density and energy of the trapping states was calculated from the observed J-V characteristics. The E-k dispersion relation for InAs was also determined and found to be in excellent agreement with the two-band model.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:(Electrical Engineering) ; Schottky barriers
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Electrical Engineering
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Mead, Carver
Thesis Committee:
  • Unknown, Unknown
Defense Date:31 October 1969
Record Number:CaltechETD:etd-06212004-113629
Persistent URL:
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2665
Deposited By: Imported from ETD-db
Deposited On:21 Jun 2004
Last Modified:17 May 2024 21:18

Thesis Files

PDF (Parker_gh_1970.pdf) - Final Version
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