Tunneling in Schottky Barriers

Citation

Parker, Gerhard Hans (1970) Tunneling in Schottky Barriers. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/QC24-Z481. https://resolver.caltech.edu/CaltechETD:etd-06212004-113629

Abstract

The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low voltage levels by providing a two-step transition. The slope of the forward bias log J vs. V curves for tunneling through the intermediate states was reduced by a factor of 2. The approximate density and energy of the trapping states was calculated from the observed J-V characteristics. The E-k dispersion relation for InAs was also determined and found to be in excellent agreement with the two-band model.

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