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Part I. Solid-Phase Growth of Germanium Structures. Part II. Condensation of Injected Electrons and Holes in Germanium

Citation

Marrello, Vincent (1975) Part I. Solid-Phase Growth of Germanium Structures. Part II. Condensation of Injected Electrons and Holes in Germanium. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/56z0-0h91. https://resolver.caltech.edu/CaltechTHESIS:08312021-204039498

Abstract

Part I

Solid-solid reactions between a semiconductor and evaporated metal films can lead to semiconductor crystal growth. In this work, two aspects of solid-phase growth have been investigated; 1) growth of epitaxial Ge layers from a solid solution of Ge in an Al film onto single crystal Ge substrate (solid-phase epitaxy), and 2) growth of Ge crystallites in Al films from amorphous Ge films deposited on the Al film.

In solid-phase epitaxial studies, backscattering measurements with MeV 4He+ ions showed that a solid-solid reaction occurred at temperatures below the Ge/Al eutectic point. Channeling effect measurements with MeV 4He+ ions indicated that the Ge layers were well-ordered and epitaxial. Electron microprobe measurements indicated the Ge layers contained Al. Hall effect measurements showed the Ge layers to be heavily p-doped. These Ge layers have been used to construct p-type contacts on p-n diodes, double injection diodes and nuclear particle detectors.

Ge crystallite growth in Al films occurs when an amorphous Ge film is deposited on an Al film and is heated at temperatures below the Ge/Al eutectic point. Crystallization of Ge occurs by an initial dissolution of Ge into the Al film followed by diffusion and growth of Ge crystallites in the Al films.

The nature of Ge crystallite growth has been studied by MeV 4He+ ion backscattering techniques, transmission electron diffractometry, scanning electron microscopy and electron microprobe analysis.

Part II

We demonstrate for the first time that the condensation of electrons and holes in Ge can be produced by electrical injection of carriers. The condensate occurs in double injection diodes at temperatures of at least up to 5°K.

The recombination radiation from the condensate was analysed using an infrared spectrometer. The LA- and TO-phonon assisted recombination radiation lines from the condensate occur at 709 meV and 700 meV respectively. The linewidth at half maximum of the 709 meV line is 3 meV. We measure a lifetime for the condensate of 40 μs. The radiation was emitted almost uniformly from the volume between the contacts of the double injection diode. The radiation intensity increased with increasing current and decreasing temperature.

LA-phonon assisted exciton and bound exciton recombination radiation lines at 714 meV and 712 meV respectively were observed from 7 to 15°K. Above 15°K, only the exciton line was observed. The recombination radiation lifetime of the exciton at 20°K is 6 μs.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:(Electrical Engineering)
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Electrical Engineering
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Mayer, James Walter (advisor)
  • McGill, Thomas C. (advisor)
Thesis Committee:
  • Unknown, Unknown
Defense Date:19 September 1974
Additional Information:Title varies in the 1975 Caltech commencement program: I. Solid-Phase Growth of Ge Structures. II. Condensation of Injected Electrons and Holes in Ge. Page 103 missing from thesis file (PDF).
Funders:
Funding AgencyGrant Number
U.S. Atomic Energy CommissionUNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
IBMUNSPECIFIED
Shlumberg FoundationUNSPECIFIED
Record Number:CaltechTHESIS:08312021-204039498
Persistent URL:https://resolver.caltech.edu/CaltechTHESIS:08312021-204039498
DOI:10.7907/56z0-0h91
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.1654169DOIArticle adapted for thesis chapter.
https://doi.org/10.1002/pssa.2210130223DOIArticle adapted for thesis chapter.
https://doi.org/10.1016/0029-554x(73)90640-xDOIArticle adapted for thesis chapter.
https://doi.org/10.1126/science.180.4089.948DOIArticle adapted for thesis chapter.
https://doi.org/10.1016/0022-3093(73)90061-6DOIArticle adapted for thesis chapter.
https://doi.org/10.1063/1.1663483DOIArticle adapted for thesis chapter.
https://doi.org/10.1103/physrevlett.31.593DOIArticle adapted for thesis chapter.
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:14349
Collection:CaltechTHESIS
Deposited By: Benjamin Perez
Deposited On:07 Sep 2021 17:43
Last Modified:05 Aug 2024 22:32

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