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High Energy Heavy Ion Beam Enhanced Adhesion of Gold Films to GaAs

Citation

Paine, Scott Nelson (1984) High Energy Heavy Ion Beam Enhanced Adhesion of Gold Films to GaAs. Senior thesis (Major), California Institute of Technology. doi:10.7907/Z9XD0ZWZ. https://resolver.caltech.edu/CaltechTHESIS:02202018-132931271

Abstract

Improvement of the adhesion of gold films to GaAs substrates by irradiation with a beam of high energy heavy ions was studied by Scotch Tape, scrub, and scratch test methods. Simple measurements of the effect of irradiation on the electrical contact properties of the Au/GaAs interface were also made. Substrate materials were taken from four differently doped GaAs wafers, thus providing a selection of substrate electronic properties.

The results indicate dependence of the ion dose threshold for improved adhesion on the bulk electronic properties of the substrate.

Item Type:Thesis (Senior thesis (Major))
Subject Keywords:gold films ; GaAs ; high energy heavy ion beams
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Public (worldwide access)
Research Advisor(s):
  • Tombrello, Thomas A.
Defense Date:25 May 1984
Record Number:CaltechTHESIS:02202018-132931271
Persistent URL:https://resolver.caltech.edu/CaltechTHESIS:02202018-132931271
DOI:10.7907/Z9XD0ZWZ
ORCID:
AuthorORCID
Paine, Scott Nelson0000-0003-4622-5857
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10725
Collection:CaltechTHESIS
Deposited By: Kathy Johnson
Deposited On:20 Feb 2018 21:57
Last Modified:04 Oct 2019 00:20

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