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Effects Produced in GaAs by MeV Ion Bombardment

Citation

Wie, Chu Ryang (1985) Effects Produced in GaAs by MeV Ion Bombardment. Dissertation (Ph.D.), California Institute of Technology. https://resolver.caltech.edu/CaltechTHESIS:10292015-135146919

Abstract

Presented in the first part of this thesis is work performed on the ionizing energy beam induced adhesion enhancement of thin (~ 500 Angstrom) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16O, 19F, and 35Cl), with energies between 1 and 20 MeV. Using the "Scratch" test for adhesion measurement, and ESCA for chemical analysis of the film-substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed which explains the experimental data on the the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The ESCA data indicate that the chemical bonds (or compounds), which are responsible for the increase in the thin film adherence, are hydroxides rather than oxides.

In the second part of the thesis we present a research performed on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions). Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion. The x-ray rocking curve technique with a dynamical diffraction theory analysis provides the depth distribution of the strain and damage in the MeV ion bombarded crystals.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Restricted to Caltech community only
Research Advisor(s):
  • Tombrello, Thomas A.
Thesis Committee:
  • Tombrello, Thomas A. (chair)
  • Corngold, Noel Robert
  • Johnson, William Lewis
  • Nicolet, Marc-Aurele
  • Vreeland, Thad
Defense Date:10 May 1985
Record Number:CaltechTHESIS:10292015-135146919
Persistent URL:https://resolver.caltech.edu/CaltechTHESIS:10292015-135146919
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9261
Collection:CaltechTHESIS
Deposited By: Benjamin Perez
Deposited On:29 Oct 2015 23:27
Last Modified:04 Oct 2019 00:10

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