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New optoelectronic devices using GaAs-GaAlAs epitaxy

Citation

Lee, Chien-Ping (1978) New optoelectronic devices using GaAs-GaAlAs epitaxy. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechTHESIS:07182014-090759102

Abstract

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga1-xAlxAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga1-xAlxAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm2 have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga1-xAlxAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga1-xAlxAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Restricted to Caltech community only
Research Advisor(s):
  • Yariv, Amnon
Thesis Committee:
  • Unknown, Unknown
Defense Date:26 May 1978
Record Number:CaltechTHESIS:07182014-090759102
Persistent URL:http://resolver.caltech.edu/CaltechTHESIS:07182014-090759102
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8560
Collection:CaltechTHESIS
Deposited By: Benjamin Perez
Deposited On:18 Jul 2014 16:29
Last Modified:18 Jul 2014 16:29

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