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Diffusion barriers for VLSI applications

Citation

So, Frank Cheung Tao (1988) Diffusion barriers for VLSI applications. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-02012007-110846

Abstract

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document.

This thesis is concerned with diffusion barriers in contact structures to semiconductors. Diffusion barriers are indispensable in present contact technologies to preserve device characteristics from the influence of metal-semiconductor interaction during post-metallization processing.

The absence of grain boundaries makes amorphous W-Zr and Ni-W alloy barriers very attractive for high temperature applications. Nevetheless, in the presence of an adjoining metal layer such as Al, these amorphous barriers are chemically dissociated to form compounds with the metal. The usefulness of these barrier in VLSI metallization schemes is severely limited by their high reactivity with Al within normal processing temperature cycles. Such thermal instability can be removed, however, by adding nitrogen to the barrier layers during sputter deposition.

Becoming aware of the beneficial effects of nitrogen incorporation, we investigate the performance of nitrogen-doped W barrier films in various contact configurations. Reactively sputtered amorphous and polycrystalline W-N layers are demonstrated to be excellent diffusion barriers against interdiffusion between Si-Al, Si-Ag, GaAs-Ag, and GaAs-Au. A novel idea of utilizing W-N as an interconnect in CMOS fabrication is also discussed.

Conducting transition metal oxides emerge as a new class of diffusion barriers. Metallic [...] films are deposited by reactive sputtering a Mo target in controlled O2/Ar ambients. These [...] barriers can effectively protect Si n+-p shallow junctions from Al spiking even beyond the eutectic temperature of Si-Al. RuO2 films are also found to be equally good in suppressing Si-Al interdiffusion. The present study clearly shows that [...] and RuO2 barriers are the most outstanding performers among all the passive barriers that have been explored so far.

Item Type:Thesis (Dissertation (Ph.D.))
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Electrical Engineering
Thesis Availability:Restricted to Caltech community only
Research Advisor(s):
  • Nicolet, Marc-Aurele
Thesis Committee:
  • Unknown, Unknown
Defense Date:31 July 1987
Record Number:CaltechETD:etd-02012007-110846
Persistent URL:http://resolver.caltech.edu/CaltechETD:etd-02012007-110846
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:439
Collection:CaltechTHESIS
Deposited By: Imported from ETD-db
Deposited On:13 Feb 2007
Last Modified:26 Dec 2012 02:29

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