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Long wavelength GaInAsP/InP semiconductor lasers for optical communications

Citation

Chen, Pei-Chuang (1982) Long wavelength GaInAsP/InP semiconductor lasers for optical communications. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-09132006-133617

Abstract

Optical fiber communication systems have shifted toward the long wavelength range of 1.2-1.6 µm due to lower losses and dispersion available with high quality fibers. The quaternary GaInAsP/InP material system has evolved as the most promising system for light sourses in this range. Indium phosphide electronic devices are expected to possess high frequency switching capabilities, but present device technology is still rather primitive. In anticipation of future developments, which will render opto-electronic integration in this system advantageous, two laser structures on semi-insulating InP substrates were demonstrated. The substrate permits electrical isolation between components and thus is ideal in planar integration of the lasers with electronic devices. Low threshold lasers can only be achieved when the active region is properly defined in two dimensions to provide good optical and carrier confinement. Present techniques usually require difficult and intricate growth step of two-step liquid phase epitaxy. Embedded epitaxy, by growth through a mask, offers a simple yet elegant means of two dimensional definition of the active region with only a single growth step. Low threshold lasers were fabricated with this technique and demonstrated its potential applications. All GaInAsP/InP lasers show accelerated increase of threshold current with temperature of a different nature than similar GaA1As lasers. To understand the origin of this phenomenon, calculations were made of the Auger process in these lasers, and have demonstrated that they play a very important role in the temperature behavior of GaInAsP/InP lasers.

Item Type:Thesis (Dissertation (Ph.D.))
Subject Keywords:Applied Physics
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Restricted to Caltech community only
Research Advisor(s):
  • Yariv, Amnon
Thesis Committee:
  • Unknown, Unknown
Defense Date:9 October 1981
Record Number:CaltechETD:etd-09132006-133617
Persistent URL:http://resolver.caltech.edu/CaltechETD:etd-09132006-133617
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3519
Collection:CaltechTHESIS
Deposited By: Imported from ETD-db
Deposited On:29 Sep 2006
Last Modified:02 Dec 2014 23:30

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