Parker, Gerhard Hans (1970) Tunneling in Schottky barriers. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-06212004-113629
The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low voltage levels by providing a two-step transition. The slope of the forward bias log J vs. V curves for tunneling through the intermediate states was reduced by a factor of 2. The approximate density and energy of the trapping states was calculated from the observed J-V characteristics. The E-k dispersion relation for InAs was also determined and found to be in excellent agreement with the two-band model.
|Item Type:||Thesis (Dissertation (Ph.D.))|
|Subject Keywords:||Schottky barriers|
|Degree Grantor:||California Institute of Technology|
|Division:||Engineering and Applied Science|
|Major Option:||Electrical Engineering|
|Thesis Availability:||Public (worldwide access)|
|Defense Date:||31 October 1969|
|Default Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Imported from ETD-db|
|Deposited On:||21 Jun 2004|
|Last Modified:||26 Dec 2012 02:53|
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