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All-optical wavelength conversion by four-wave mixing in a semiconductor optical amplifier

Citation

Lee, Robert Bumju (1997) All-optical wavelength conversion by four-wave mixing in a semiconductor optical amplifier. Dissertation (Ph.D.), California Institute of Technology. http://resolver.caltech.edu/CaltechETD:etd-01102008-142830

Abstract

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document.

Wavelength division multiplexed optical communication systems will soon become an integral part of commercial optical networks. A crucial new function required in WDM networks is wavelength conversion, the spectral translation of information-laden optical carriers, which enhances wavelength routing options and greatly improves network reconfigurability. One of several techniques for implementing this function is four-wave mixing utilizing ultra-fast intraband nonlinearities in semicondutor optical amplifiers.

The effects of input power, noise prefiltering and semiconductor optical amplifier length on the conversion efficiency and optical signal-to-noise ratio were examined. Systems experiments have been conducted in which several important performance characteristics of the wavelength converter were studied. A bit-error-rate performance of < 10[...] at 10 Gb/s was achieved for a record shift of 18 nm down in wavelength and 10 nm up in wavelength. Two cascaded conversions spanning a 40 km fiber link at 10 Gb/s are also demonstrated for conversions of up to 9 nm down and up in wavelength. The dynamic range of input signal power and its impact on the BER performance were studied at 2.5 Gb/s for both a single-channel conversion and a simultaneous 2-channel conversion. The crosstalk penalty induced by parasitic cross-gain modulation in 2-channel conversion is quantified. The spectral inversion which results from the conversion process is studied by time-resolved spectral analysis, and its application as a technique for dispersion compensation is demonstrated.

Finally, the application of selective organometallic vapor-phase epitaxy for the formation of highly-uniform and densely-packed arrays of GaAs quantum dots is demonstrated. GaAs dots of 15-20 nm in base diameter and 8-10 nm in height terminated by slow-growth crystallographic planes were grown within dielectric-mask openings and characterized by atomic force microscopy.

Item Type:Thesis (Dissertation (Ph.D.))
Degree Grantor:California Institute of Technology
Division:Engineering and Applied Science
Major Option:Applied Physics
Thesis Availability:Restricted to Caltech community only
Research Advisor(s):
  • Vahala, Kerry J.
Thesis Committee:
  • Unknown, Unknown
Defense Date:22 April 1997
Record Number:CaltechETD:etd-01102008-142830
Persistent URL:http://resolver.caltech.edu/CaltechETD:etd-01102008-142830
Default Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:115
Collection:CaltechTHESIS
Deposited By: Imported from ETD-db
Deposited On:28 Jan 2008
Last Modified:26 Dec 2012 02:27

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